Anisotropic conductive layer as a back contact in thin film photovoltaic devices

摘要

Thin film photovoltaic devices 10 are generally provided. The device 10 can include a transparent conductive oxide layer 14 on a glass substrate 12, an n-type thin film layer 18 on the transparent conductive layer 14, and a p-type thin film layer 20 on the n-type layer 18. The n-type thin film layer 18 and the p-type thin film layer 20 form a p-n junction. An anisotropic conductive layer 22 is applied on the p-type thin film layer 20, and includes a polymeric binder and a plurality of conductive particles 23. A metal contact layer 24 can then be positioned on the anisotropic conductive layer 22.