| 摘要 |
Hollow-anode glow discharge apparatus for both deposition and etching in the form of two-electrode and three-electrode reactors provide improved uniformity, efficiency, and low-pressure substrate processing. In a first embodiment for ion-dominated processes, the apparatus includes a high energy density uniformizing grid (90) having multiple, multi-sized and evenly spaced holes (92, 94). In a second embodiment for chemically dominated processes, the apparatus includes a high energy density uniformizing grid having multiple, evenly spaced holes and a stepped or continuously variable non-planar profile. In a third embodiment for low pressure ion dominated and/or chemically dominated processes, the apparatus includes a high energy density grid having multiple, evenly sized and spaced holes of widths large enough to overcome the dark space effects. In a fourth embodiment for ion dominated and/or chemically dominated processes, the apparatus includes a high energy density source that synergistically cooperates with an apertured grid to provide selected energy ions at high densities. |
