发明名称 HIGH-SPEED X-RAY ANALYSIS SYSTEM FOR THE ANALYZING OF THE GAN GROWTH LAYER
摘要 PURPOSE: A high-speed X-ray analysis apparatus for analyzing growth of a GaN(Gallium Nitride) layer is provided to prevent damage of samples due to contact with a tool and reduce analysis time by using a transferring robot. CONSTITUTION: A high-speed X-ray analysis apparatus for analyzing growth of a GaN(Gallium Nitride) layer comprises a cassette module(1), an aligning module(2), a sample transferring module(3), and an analyzing stage(4). If cassettes containing samples are placed on the cassette module, the cassette module is mapping the samples of the cassette to check location of wafer. The aligning module sets the samples in the center. The sample transferring module moves the samples to the X-ray analyzing stage from the aligning module. The analyzing stage fixes the samples.
申请公布号 KR20120017758(A) 申请公布日期 2012.02.29
申请号 KR20100080551 申请日期 2010.08.19
申请人 TECHVALLEY CO., LTD. 发明人 KIM, JAE HOON;KIM, HAN SEOK;PARK, CHIN KUN;JIN, YOUNG DUCK;YOON, MYOUNG HUN
分类号 G01N23/00;G01N35/10 主分类号 G01N23/00
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