发明名称 |
HIGH-SPEED X-RAY ANALYSIS SYSTEM FOR THE ANALYZING OF THE GAN GROWTH LAYER |
摘要 |
PURPOSE: A high-speed X-ray analysis apparatus for analyzing growth of a GaN(Gallium Nitride) layer is provided to prevent damage of samples due to contact with a tool and reduce analysis time by using a transferring robot. CONSTITUTION: A high-speed X-ray analysis apparatus for analyzing growth of a GaN(Gallium Nitride) layer comprises a cassette module(1), an aligning module(2), a sample transferring module(3), and an analyzing stage(4). If cassettes containing samples are placed on the cassette module, the cassette module is mapping the samples of the cassette to check location of wafer. The aligning module sets the samples in the center. The sample transferring module moves the samples to the X-ray analyzing stage from the aligning module. The analyzing stage fixes the samples. |
申请公布号 |
KR20120017758(A) |
申请公布日期 |
2012.02.29 |
申请号 |
KR20100080551 |
申请日期 |
2010.08.19 |
申请人 |
TECHVALLEY CO., LTD. |
发明人 |
KIM, JAE HOON;KIM, HAN SEOK;PARK, CHIN KUN;JIN, YOUNG DUCK;YOON, MYOUNG HUN |
分类号 |
G01N23/00;G01N35/10 |
主分类号 |
G01N23/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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