Thermal shield for silicon production reactors

摘要

The invention relates to a thermal shield for being used inside a reactor comprising a reaction space wherein there is carried out a silicon growth process by means of chemical vapor deposition or CVD between 1000°C and 1200°C from a flow of precursor gas comprising silicon compounds such as silane or chlorosilanes, circulating through a reaction chamber on an assembly of silicon parts. The thermal shield is manufactured in a material which does not add contaminants to the chemical silicon vapor deposition process and surrounds the assembly of silicon parts such that in operational mode the thermal shield is opaque to infrared radiation.