METHOD AND APPARATUS FOR PRODUCING A POLYCRYSTALLINE SILICON FILM

摘要

A process for a polycrystal silicon film is provided with the step of forming, on a glass substrate (31), an amorphous silicon film (33) having a first region (33a) and a second region (33b) that contacts this first region (33b), the step of forming a first polycrystal portion (34a) by irradiating the first region (33a) of the amorphous silicon film (33) with a laser (35) of which the wavelength is not less than 390 nm and not more than 640 nm and the step of forming a second polycrystal portion (34b) that contacts the first polycrystal portion (34a) by irradiating the second region (33b) and the portion of the region of the first polycrystal portion (34a) that contacts the second region (33b) of the amorphous silicon film (33) with the laser (35) of which the wavelength is not less than 390 nm and not more than 640 nm.