发明名称 |
A TRANSISTOR ARRANGEMENT AND A METHOD OF FORMING A TRANSISTOR ARRANGEMENT |
摘要 |
<p>In an embodiment, a transistor arrangement is provided. The transistor arrangement comprises a nanowire including a first nanowire region and a second nanowire region; a first gate contact disposed over the first nanowire region; an insulating region disposed over the second nanowire region; a second gate contact disposed over the insulating region; wherein the first nanowire region and the first gate contact forms a part of an enhancement mode transistor and the second nanowire region, the insulating region and the second gate contact forms a part of a depletion mode transistor. A method of forming a transistor arrangement may also be provided. Also contemplated is a transistor and a method for forming said transistor, where the transistor comprises a nanowire and a gate contact, where the gate contact is formed by directly writing the gate contact onto a region of the nanowire.</p> |
申请公布号 |
SG177480(A1) |
申请公布日期 |
2012.02.28 |
申请号 |
SG20120000170 |
申请日期 |
2010.07.30 |
申请人 |
AGENCY FOR SCIENCE, TECHNOLOGY AND RESEARCH |
发明人 |
SOMENATH, ROY;GAO, ZHIQIANG |
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代理机构 |
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