发明名称 Memory system protected from errors due to read disturbance and reading method thereof
摘要 A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page.
申请公布号 US8125825(B2) 申请公布日期 2012.02.28
申请号 US20100791077 申请日期 2010.06.01
申请人 SEOL BONG-GWAN;SAMSUNG ELECTRONICS CO., LTD. 发明人 SEOL BONG-GWAN
分类号 G11C11/34;G11C8/00;G11C16/04 主分类号 G11C11/34
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