发明名称 |
Memory system protected from errors due to read disturbance and reading method thereof |
摘要 |
A method of reading a memory system including a flash memory includes: reading data from a page in a first block of the flash memory, incrementing a counter each time data is read from the page to store a corresponding number of read-out cycles of the flash memory, and copying data from the first block of the flash memory to a second block of the flash memory when the counter exceeds a reference number of read-out cycles. The data from the first block includes data from the page. |
申请公布号 |
US8125825(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20100791077 |
申请日期 |
2010.06.01 |
申请人 |
SEOL BONG-GWAN;SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
SEOL BONG-GWAN |
分类号 |
G11C11/34;G11C8/00;G11C16/04 |
主分类号 |
G11C11/34 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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