Diffusing impurity ions into pillars to form vertical transistors

摘要

A method for manufacturing a semiconductor device that includes forming a pillar pattern including a sidewall contact over a semiconductor substrate; forming a silicon layer in a lower portion disposed between the pillar patterns; implanting ions into the silicon layer; diffusing the implanted impurity ions into the inside of the pillar pattern to form an ion-implanting region; removing the silicon layer; and burying a conductive material in the lower portion disposed between the pillar patterns. The method can prevent a floating body effect by adding a process of a vertical channel transistor.