Method of manufacturing group III nitride semiconductor layer bonded substrate

摘要

The present method of manufacturing a group III nitride semiconductor layer bonded substrate includes the steps of: implanting ions I of at least any of hydrogen and helium in a region having a prescribed depth D from one main surface of a group III nitride semiconductor substrate; bonding a different-composition substrate with the main surface of the group III nitride semiconductor substrate; obtaining a group III nitride semiconductor layer bonded substrate by separating the group III nitride semiconductor substrate at a region implanted with the ions I; and annealing the group III nitride semiconductor layer bonded substrate at a temperature not lower than 700° C. in an atmosphere of a nitrogen-containing gas N. Thus, a group III nitride semiconductor layer bonded substrate high in crystallinity of a group III nitride semiconductor layer is provided.