Designing method of photo-mask and method of manufacturing semiconductor device using the photo-mask

摘要

In a method of designing a photo-mask, a graphic pattern as a target of development simulation is divided into a plurality of sub graphic patterns which are respectively assigned with a plurality of orthogonal coordinate systems which are not orthogonal to each other. A model-based OPC (optical proximity correction) is performed on each of the plurality of sub graphic patterns by moving sides of the sub graphic pattern in directions parallel to coordinate axes of the orthogonal coordinate system assigned to the sub graphic pattern.