发明名称 AG base sputtering target and process for producing the same
摘要 An Ag sputtering target 6 has three-dimensional fluctuation of grain sizes of not more than 18%. The fluctuation is determined by exposing plural sputtering surfaces by slicing the sputtering target 6 in planes to initial sputtering surface, selecting plural locations on each of the exposed sputtering surfaces, calculating values A1 and B1 using the formula below, and selecting larger one of the values A1 and B1 as the three-dimensional fluctuation of the grain sizes. A1=(Dmax&minus;Dave)/Dave×100(%) B1=(Dave<Dmin)/Dave×100(%) Dmax: maximum value among the grain sizes D at all the selected locations Dmin: minimum value among the grain sizes D at all the selected locations Dave: average value of the grain sizes D at all the selected locations.
申请公布号 US8123875(B2) 申请公布日期 2012.02.28
申请号 US20100793257 申请日期 2010.06.03
申请人 TAKAGI KATSUTOSHI;NAKAI JUNICHI;TAUCHI YUUKI;MATSUZAKI HITOSHI;FUJII HIDEO;KABUSHIKI KAISHA KOBE SEIKO SHO;KOBELCO RESEARCH INSTITUTE, INC. 发明人 TAKAGI KATSUTOSHI;NAKAI JUNICHI;TAUCHI YUUKI;MATSUZAKI HITOSHI;FUJII HIDEO
分类号 C22F1/14;C23C14/34;C22C5/06;C22F1/00 主分类号 C22F1/14
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