发明名称 |
Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium |
摘要 |
A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon oxide film while controlling temperature of the substrate to a first process temperature; and removing the silicon oxide film transformed to the reaction product while controlling the temperature of the substrate to a second process temperature higher than the first process temperature. The silicon oxide film is a BPSG film. |
申请公布号 |
US8124536(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20070946289 |
申请日期 |
2007.11.28 |
申请人 |
NISHIMURA EIICHI;TOKYO ELECTRON LIMITED |
发明人 |
NISHIMURA EIICHI |
分类号 |
H01L21/302;H01L21/461 |
主分类号 |
H01L21/302 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|