发明名称 Manufacturing method of capacitor electrode, manufacturing system of capacitor electrode, and storage medium
摘要 A method for manufacturing a capacitor electrode by removing a silicon oxide film on a surface of a substrate, including: transforming the silicon oxide film into a reaction product by supplying a gas containing a halogen element to chemically react with the silicon oxide film while controlling temperature of the substrate to a first process temperature; and removing the silicon oxide film transformed to the reaction product while controlling the temperature of the substrate to a second process temperature higher than the first process temperature. The silicon oxide film is a BPSG film.
申请公布号 US8124536(B2) 申请公布日期 2012.02.28
申请号 US20070946289 申请日期 2007.11.28
申请人 NISHIMURA EIICHI;TOKYO ELECTRON LIMITED 发明人 NISHIMURA EIICHI
分类号 H01L21/302;H01L21/461 主分类号 H01L21/302
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