发明名称 Semiconductor device and fabricating method of the same
摘要 Openings are formed by lithography and subsequent dry etching at the portions of a first protective film which correspond to connecting holes of second plugs which will be described later, namely at the portions thereof which align with first plugs, wherein the openings have a diameter greater than that of connecting holes by about 0.4 μm.
申请公布号 US8125014(B2) 申请公布日期 2012.02.28
申请号 US20050293893 申请日期 2005.12.05
申请人 OZAKI YASUTAKA;FUJITSU SEMICONDUCTOR LIMITED 发明人 OZAKI YASUTAKA
分类号 H01L29/76 主分类号 H01L29/76
代理机构 代理人
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