| 发明名称 |
Magnetic thin film, and magnetoresistance effect device and magnetic device using the same |
| 摘要 |
A magnetic thin film being ferromagnetic and exhibiting large spin polarization at room temperature is provided that comprises a substrate (2) and a Co2Fe(Si1-xAlx) thin film (3) formed on the substrate (2) where 0<x<1 and wherein the Co2Fe(Si1-xAlx) thin film (3) has a L21 or a B2 structure. There may be interposed a buffer layer (4) between the substrate (2) and the Co2Fe(Si1-xAlx) thin film (3). A tunneling magnetoresistance effect device and giant magnetoresistance effect device using such a magnetic thin film exhibit large TMR and GMR at room temperature, with low electric current and under low magnetic field. Using such a magnetoresistance effect device, a magnetic device and a magnetic apparatus such as a magnetic sensor, a magnetic head or MRAM are provided. |
| 申请公布号 |
US8125745(B2) |
申请公布日期 |
2012.02.28 |
| 申请号 |
US20070298529 |
申请日期 |
2007.04.27 |
| 申请人 |
INOMATA KOUICHIRO;TEZUKA NOBUKI;JAPAN SCIENCE AND TECHNOLOGY AGENCY |
发明人 |
INOMATA KOUICHIRO;TEZUKA NOBUKI |
| 分类号 |
G11B5/127 |
主分类号 |
G11B5/127 |
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