| 摘要 |
To provide a nonvolatile storage device (100) which is capable of achieving stable operation and includes variable resistance elements. The nonvolatile storage device (100) includes: memory cells (M111, M112, . . .) each of which is provided at three-dimensional cross-points between word lines (WL0, WL1, . . .) and bit lines (BL0, BL1, . . .) and having a resistance value that reversibly changes based on an electrical signal; a row selection circuit-and-driver (103) provided with transistors (103a) each of which applies a predetermined voltage to a corresponding one of the word lines (WL0, WL1, . . .); a column selection circuit-and-driver (104) provided with transistors (104a) each of which applies a predetermined voltage to a corresponding one of the bit lines (BL0, BL1, . . .); and a substrate bias circuit (110) which applies a forward bias voltage to a substrate of such transistors (103a and 104a).
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