| 摘要 |
<p>A cleaning method for an exhaust gas containing ammonia, silanes, and organometallic compounds exhausted from a nitride film production step, etc., for producing compound semiconductors. After removing the silanes and the organometallic compounds from the exhaust gas by contacting the exhaust gas with a cleaning agent comprising soda lime having provided thereon a copper(II) salt, the exhaust gas is contacted with an ammonia decomposition catalyst to decompose ammonia into hydrogen and nitrogen, and undecomposed ammonia in the remaining exhaust gas is then removed by a cleaning agent comprising an inorganic carrier having provided thereon a copper(II) salt, or an active carbon having provided thereon copper sulfate.</p> |
