发明名称 |
NON-VOLATILE MEMORY CELL ARRAY, MEMORY DEVICE AND MEMORY SYSTEM |
摘要 |
PURPOSE: A nonvolatile memory cell array, a memory device, and a memory system are provided to improve reliability by reducing a disturbance property of a memory cell. CONSTITUTION: A row selector(30) selects a row of a memory cell array(10). A column selector(40) selects a column of the memory cell array. The row selector includes a common source driver(20). A read-write circuit(50) is controlled by a control circuit(70). Data stored in a buffer(60) is loaded in the read-write circuit. A voltage generating circuit(80) is controlled by the control circuit. The control circuit controls a program and a read-write operation.
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申请公布号 |
KR20120017206(A) |
申请公布日期 |
2012.02.28 |
申请号 |
KR20100079764 |
申请日期 |
2010.08.18 |
申请人 |
SAMSUNG ELECTRONICS CO., LTD. |
发明人 |
JEON, CHANG MIN;JEON, HEE SEOG;YOO, HYUN KHE;RYU, JI DO |
分类号 |
G11C16/08;G11C16/02;G11C16/30 |
主分类号 |
G11C16/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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