发明名称 NON-VOLATILE MEMORY CELL ARRAY, MEMORY DEVICE AND MEMORY SYSTEM
摘要 PURPOSE: A nonvolatile memory cell array, a memory device, and a memory system are provided to improve reliability by reducing a disturbance property of a memory cell. CONSTITUTION: A row selector(30) selects a row of a memory cell array(10). A column selector(40) selects a column of the memory cell array. The row selector includes a common source driver(20). A read-write circuit(50) is controlled by a control circuit(70). Data stored in a buffer(60) is loaded in the read-write circuit. A voltage generating circuit(80) is controlled by the control circuit. The control circuit controls a program and a read-write operation.
申请公布号 KR20120017206(A) 申请公布日期 2012.02.28
申请号 KR20100079764 申请日期 2010.08.18
申请人 SAMSUNG ELECTRONICS CO., LTD. 发明人 JEON, CHANG MIN;JEON, HEE SEOG;YOO, HYUN KHE;RYU, JI DO
分类号 G11C16/08;G11C16/02;G11C16/30 主分类号 G11C16/08
代理机构 代理人
主权项
地址