发明名称 |
METHOD FOR FABRICATING SEMICONDUCTOR DEVICES WITH SHALLOW DIFFUSION REGIONS |
摘要 |
<p>METHOD FOR FABRICATING SEMICONDUCTOR DEVICESA method for fabricating a semiconductor device is presented. The method includes providing a substrate and forming a gate stack over the substrate. A first laser processing to form vacancy rich regions within the substrate on opposing sides of the gate stack is performed. The vacancy rich regions have a first depth from a surface of the substrate. A first implant causing end of range defect regions to be formed on opposing sides of the gate stack at a second depth from the surface of the substrate is also carried out, wherein the first depth is proximate to the second depth. Fig. 6g</p> |
申请公布号 |
SG177900(A1) |
申请公布日期 |
2012.02.28 |
申请号 |
SG20110093689 |
申请日期 |
2009.05.15 |
申请人 |
GLOBALFOUNDRIES SINGAPORE PTE. LTD.;NANYANG TECHNOLOGICAL UNIVERSITY;NATIONAL UNIVERSITY OF SINGAPORE |
发明人 |
TAN XUEMING DEXTER;BENJAMIN COLOMBEAU;ONG KUANG KIAN CLARK;YEONG SAI HOON;NG CHEE MANG;PEY KIN LEONG |
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