发明名称 |
Semiconductor light emitting element and method for manufacturing the same |
摘要 |
A ZnO-based semiconductor light emitting element includes a ZnO-based semiconductor layer formed on a rectangular sapphire A-plane substrate having a principal surface lying in the A-plane {11-20}. The substrate has a thickness of 50 to 200μm and is surrounded by two parallel first side edges forming an angle in a range of 52.7° to 54.7° with respect to the m-axis orthogonal to the c-axis and two parallel second side edges orthogonal to the first side edges. The light emitting element is obtained by: forming, on a surface of the sapphire A-plane substrate opposite to the surface on which the ZnO-based semiconductor layer is formed, first scribed grooves forming an angle in a range of 52.7° to 54.7° with respect to the m-axis and second scribed grooves orthogonal to the first scribed grooves; and breaking the substrate along the first scribed grooves and then along the second scribed grooves.
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申请公布号 |
US8124969(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20090428768 |
申请日期 |
2009.04.23 |
申请人 |
HORIO NAOCHIKA;STANLEY ELECTRIC CO., LTD. |
发明人 |
HORIO NAOCHIKA |
分类号 |
H01L33/00;H01L33/06;H01L33/16;H01L33/28;H01L33/36;H01L33/56;H01L33/62 |
主分类号 |
H01L33/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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