发明名称 |
Method for manufacturing magnetic memory chip device |
摘要 |
A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 μm or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.
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申请公布号 |
US8124425(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20080525999 |
申请日期 |
2008.02.21 |
申请人 |
RENESAS ELECTRONICS CORPORATION |
发明人 |
MISUMI KAZUYUKI;SHIMIZU MASAHIRO;KOGA TSUYOSHI;AKIYAMA TATSUHIKO;MURAKAMI TOMOHIRO |
分类号 |
H01L21/00 |
主分类号 |
H01L21/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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