发明名称 Method for manufacturing magnetic memory chip device
摘要 A method for manufacturing a magnetic memory chip device comprises the steps of: writing information in each of a plurality of magnetic memory chips formed on a silicon wafer; adhering a high magnetic permeability plate on a back face of the silicon wafer after writing information, the high magnetic permeability plate having a higher magnetic permeability than silicon and having a thickness of 50 μm or more; dicing the silicon wafer into respective magnetic memory chips after adhering the high magnetic permeability plate.
申请公布号 US8124425(B2) 申请公布日期 2012.02.28
申请号 US20080525999 申请日期 2008.02.21
申请人 RENESAS ELECTRONICS CORPORATION 发明人 MISUMI KAZUYUKI;SHIMIZU MASAHIRO;KOGA TSUYOSHI;AKIYAMA TATSUHIKO;MURAKAMI TOMOHIRO
分类号 H01L21/00 主分类号 H01L21/00
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