发明名称 |
Memory device having trapezoidal bitlines and method of fabricating same |
摘要 |
A memory device and a method of fabrication are provided. The memory device includes a semiconductor substrate and a charge trapping dielectric stack disposed over the semiconductor substrate. A gate electrode is disposed over the charge trapping dielectric stack, where the gate electrode electrically defines a channel within a portion of the semiconductor substrate. The memory device includes a pair of bitlines, where the bitlines have a lower portion and a substantially trapezoidal shaped upper portion. |
申请公布号 |
US8125018(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20050033588 |
申请日期 |
2005.01.12 |
申请人 |
MELIK-MARTIROSIAN ASHOT;RAMSBEY MARK T.;RANDOLPH MARK W.;SPANSION LLC |
发明人 |
MELIK-MARTIROSIAN ASHOT;RAMSBEY MARK T.;RANDOLPH MARK W. |
分类号 |
H01L29/792 |
主分类号 |
H01L29/792 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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