发明名称 |
Local bottom gates for graphene and carbon nanotube devices |
摘要 |
Transistor devices having nanoscale material-based channels and techniques for the fabrication thereof are provided. In one aspect, a transistor device includes a substrate; an insulator on the substrate; a gate embedded in the insulator with a top surface of the gate being substantially coplanar with a surface of the insulator; a dielectric layer over the gate and insulator; a channel comprising a carbon nanostructure material formed on the dielectric layer over the gate, wherein the dielectric layer over the gate and the insulator provides a flat surface on which the channel is formed; and source and drain contacts connected by the channel. A method of fabricating a transistor device is also provided. |
申请公布号 |
US8124463(B2) |
申请公布日期 |
2012.02.28 |
申请号 |
US20090563553 |
申请日期 |
2009.09.21 |
申请人 |
CHEN ZHIHONG;FRANKLIN AARON D.;HANNON JAMES B.;TULEVSKI GEORGE S.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
CHEN ZHIHONG;FRANKLIN AARON D.;HANNON JAMES B.;TULEVSKI GEORGE S. |
分类号 |
H01L21/00;H01L21/84 |
主分类号 |
H01L21/00 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|