摘要 |
Disclosed herein is a dendrimer, in which metallocene, which is an oxidation-reduction material, is located at a core, and a conjugated dendron is connected to the metallocene core by a linker compound, an organic active layer having the dendrimer, an organic memory device having the organic active layer and a method of manufacturing the organic active layer and the organic memory device. The organic memory device manufactured using a dendrimer having a metallocene core of example embodiments may have a shorter switching time, decreased operation voltage, decreased manufacturing cost and increased reliability, thereby realizing a highly-integrated large-capacity memory device. |