发明名称 PROCESS FOR PURIFYING OF LOW-PURITY SILICON MATERIAL, USE OF ROTARY DRUM FURNACE IN IT, MELT OF SILICON MATERIAL, OFF-GASES AND SOLID POLYCRYSTALLINE SILICON PRODUCED BY THE PROCESS
摘要 A process and apparatus for purifying low-purity silicon material and obtaining a higher-purity silicon material is provided. The process includes providing a melting apparatus equipped with an oxy-fuel burner, and melting the low-purity silicon material in the melting apparatus to obtain a melt of higher-purity silicon material. The melting apparatus may include a rotary drum furnace and the melting of the low- purity silicon material may be carried out at a temperature in the range from 1410°C to 1700°C under an oxidizing or reducing atmosphere. A synthetic slag may be added to the molten material during melting. The melt of higher-purity silicon material may be separated from a slag by outpouring into a mould having an open top and insulated bottom and side walls. Once in the mould, the melt of higher-purity silicon material can undergo controlled unidirectional solidification to obtain solid polycrystalline silicon of an even higher purity.
申请公布号 UA97488(C2) 申请公布日期 2012.02.27
申请号 UA20090003632 申请日期 2007.09.13
申请人 SILICIUM BECANCOUR INC. 发明人 LEBLANC, DOMINIC;BOISVERT, RENE
分类号 C01B33/037;C01B33/02;C30B29/06;F27B7/06 主分类号 C01B33/037
代理机构 代理人
主权项
地址