| 摘要 |
FIELD: physics. ^ SUBSTANCE: heterostructure-based laser has a waveguide layer enclosed between wide-gap emitters with p and n conductivity type, which are simultaneously bounding layers, an active region consisting of quantum size active layer, an optical Fabry-Perot resonator and a strip ohmic contact with an injection region underneath. In the waveguide layer outside the injection region there is a doped region, where the optical limiting factor of the closed mode in the doped region and concentration of free charge carriers in the doped region satisfy the relationship: where: is the value of the component of the optical limiting factor GY in the amplification region for the closed mode, arbitrary units; is the mode loss at the output of the Fabry-Perot resonator, cm-1; i is loss due to absorption on free charge carriers in the amplification region, cm-1; ö denotes losses associated with closed mode radiation scattering on irregularities (SC), inter-band absorption (BGL) and absorption on free charge carriers in lateral parts of the injection laser, cm-1; is the closed mode optical limiting factor in the doped region, arbitrary units; n, p denote concentration of free electrons and holes in the doped region, respectively, cm-3; ân, âp denote the absorption cross-section on free electrons and holes in the doped region, respectively, cm2. ^ EFFECT: high optical power output in both continuous and pulsed modes of current pumping, high stability of the output optical power. ^ 13 cl, 5 dwg |
