| 摘要 |
FIELD: information technology. ^ SUBSTANCE: method of managing a memory device, having a bit line comprising a first section and a second section, involving precharging the first section of the bit line to a first voltage; precharging the second section of the bit line to a second voltage different from the first voltage; and distributing charge between the first section of the bit line and the second section of the bit line to obtain a final voltage between the first voltage and the second voltage. ^ EFFECT: high read stability owing lower voltage of the bit line. ^ 25 cl, 10 dwg |
