发明名称 QUANTUM-DOT LIGHT EMITTING DIODE
摘要 PURPOSE: A quantum dot light emitting device is provided to smoothly inject a hole into a quantum dot by forming an inorganic film making low energy barrier of the hole between an anode and a quantum light emitting layer. CONSTITUTION: An anode(110) and cathode(150) are formed to be faced. A quantum light emitting layer(130) is formed between the anode and the cathode. A hole-transport layer(120) is formed between the anode and the quantum light emitting layer. A electron-transport layer(140) is formed between the quantum light emitting layer and the cathode. An inorganic film(125) is formed between the anode and the quantum light emitting layer. The inorganic film is formed by a solution process or heat evaporation.
申请公布号 KR20120016342(A) 申请公布日期 2012.02.24
申请号 KR20100078610 申请日期 2010.08.16
申请人 LG DISPLAY CO., LTD. 发明人 KIM, KYUNG MAN;KIM, HO JIN;HEO, JOON YOUNG
分类号 H01L51/52;H01L51/54 主分类号 H01L51/52
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