METHOD AND APPARATUS FOR FORMING OF SEMICONDUCTOR MATERIAL QUANTUM DOTS IN THE DIELECTRIC THIN FILM

摘要

PURPOSE: An apparatus and method for forming a semiconductor material quantum dots in a dielectric thin film are provided to uniformly inject semiconductor materials into the dielectric thin film by using a high voltage pulse and a synchronized pulse magnetron deposition source. CONSTITUTION: Plasma gas is supplied to a vacuum chamber(10). Plasma for depositing a thin film is generated by applying first power to a first deposition source for depositing a dielectric thin film. The dielectric thin film of sputtered materials is deposited from the first deposition source. Plasma ions are generated by applying second power to a second deposition source(26) for generating ions of compound or semiconductor element. The quantum dot of the semiconductor material is made by injecting the plasma ions of the sputtered semiconductor materials from a second deposition source to the dielectric thin film.