| 发明名称 |
METHOD OF CLEANING SEMICONDUCTOR WAFER AND SEMICONDUCTOR WAFER |
| 摘要 |
A silicon wafer surface other than a defect is oxidized by ozone to form a silicon oxide film. A hydrofluoric acid is sprayed and subsequently a cleaning gas is sprayed onto the surface of the silicon wafer. |
| 申请公布号 |
KR101112988(B1) |
申请公布日期 |
2012.02.24 |
| 申请号 |
KR20090093179 |
申请日期 |
2009.09.30 |
| 申请人 |
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发明人 |
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| 分类号 |
H01L21/306;H01L21/302;H01L21/304 |
主分类号 |
H01L21/306 |
| 代理机构 |
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代理人 |
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| 主权项 |
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| 地址 |
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