| 摘要 |
PURPOSE: A thin film forming method using radical generated by plasma is provided to control the composition and/or density of a thin film by regulating the injection amount and/or time of reaction precursor plasma and radical or source precursor. CONSTITUTION: A thin film forming method using radical generated by plasma is as follows. First and second electrodes(10,20) are prepared, wherein the second electrode surrounds the first electrode. Each electrode has one or more first and second inlets(12,22). Electricity is applied between the first and second electrodes and a reaction precursor is injected through one or more second inlets to produce the radical of the reaction precursor. A source precursor is injected through one or more first inlets. A substrate(100) is moved relative to the first and second electrodes and exposed to the reaction precursor radical and the source precursor. |
