| 摘要 |
PURPOSE: A piezo-resistance pressure sensor and a manufacturing method thereof are provided to easily control the size of a cavity by forming the cavity through an etching process with xenon fluoride gas, which has an excellent etching selection ratio. CONSTITUTION: A piezo-resistance pressure sensor comprises a substrate(110), an etching barrier layer(118), a cavity(121), a sealing film, an upper electrode(115), and a first electrode terminal(125). The substrate holds a first semiconductor layer working as a lower electrode, a dielectric layer and a second semiconductor layer. The etching barrier layer is expanded into the first semiconductor layer through the second semiconductor layer and the dielectric layer. The cavity is defined by the etching barrier layer to be formed in the first semiconductor layer. The sealing film buries an opening expanded to the cavity through the second semiconductor layer and the dielectric layer.
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