METHOD FOR MANUFACTURING GRAPHENE SEMICONDUCTOR DEVICE, GRAPHENE SEMICONDUCTOR DEVICE MANUFACTURED BY THE SAME, GRAPHENE TRANSISTOR COMPRISING THE GRAPHENE SEMICONDUCTOR DEVICE

摘要

PURPOSE: A method for manufacturing a graphene semiconductor device using laser, the graphene semiconductor device manufactured by the same and a graphene transistor including the graphene semiconductor device are provided to reduce manufacturing costs by patterning a semiconductor device and growing a graphene with the same laser beam. CONSTITUTION: A graphene is formed by firstly irradiating a laser beam to an SiC substrate(101). A graphene semiconductor device is made by pattering the graphene through the second irradiation of the laser beam. Source and drain areas doped with impurities are formed by thirdly irradiating the laser beam to both ends of the semiconductor device under a gas atmosphere with the impurities. An insulation layer(106) is laminated in a semiconductor device area between the source and drain areas. A source electrode, a drain electrode, and gate electrode are formed by patterning a metal layer(107) after the metal layer is laminated on the source and drain areas and the insulation layer.