| 摘要 |
Disclosed is a microelectronic device, which comprises: a substrate (such as a conductor material); a semi-insulating silicon carbide epitaxial layer formed on the substrate, the semi-insulating silicon carbide epitaxial layer comprising boron and boron-related D-centre defects; and a first semiconductor device (such as a metal oxide field effect transistor) formed on the semi-insulating silicon carbide layer, wherein the semi-insulated epitaxial silicon carbide layer is formed by implanting the substrate or a first epitaxial layer formed on the substrate with boron ions to form a boron implanted region on a surface of the substrate or on a surface of the first epitaxial layer, and growing a second epitaxial layer on the boron implanted region of the substrate or on the boron implanted region of the first epitaxial layer, wherein boron in the boron implanted region diffuses into the second epitaxial layer grown on the boron implanted region to form the semi-insulating epitaxial layer.
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