| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a high-quality semiconductor device with stable characteristics and a method of manufacturing the same. <P>SOLUTION: A semiconductor device comprises: a substrate 1 having a primary surface; and a silicon carbide layer (a breakdown-voltage holding layer 2, a semiconductor layer 3, an n-type source contact layer 4, and a p-type contact region 5) including inclined side surfaces with respect to the primary surface. The side surfaces substantially include the ä03-3-8} plane. The side surfaces include a channel region. <P>COPYRIGHT: (C)2012,JPO&INPIT |
