| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a current mirror type sense amplifier and a semiconductor storage device that prevent an increase in area due to improvement of electromigration resistance and that prevent performance deterioration due to variation in process. <P>SOLUTION: A current mirror type sense amplifier 30 comprises a current control transistor for turning on or off operational current of the current mirror type sense amplifier based on a sense enable signal SE. The current control transistor is formed by dividing a plurality of current control transistors QE0-QE3 in parallel so as to divide the operational current. A current control transistor control circuit 2 turns on or off each of the current control transistors QE0-QE3 so as to decrease the operational current based on the sense enable signal SE and current control signals FOUT0-FOUT3. <P>COPYRIGHT: (C)2012,JPO&INPIT |
