发明名称 SEMICONDUCTOR DEVICE CIRCUIT
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device circuit which uses a MTCMOS circuit, has low standby current and are quickly restored from a standby state without impairing access speed. <P>SOLUTION: The semiconductor device circuit having a functional circuit including a first PMOSFET and a first NMOSFET, comprises a second PMOSFET for controlling to connecting the first PMOSFET to a power source voltage at an active mode and not to connecting the first PMOSFET to the power source voltage at standby mode; a second NMOSFET for controlling to connecting the first NMOSFET to a grounding side power source voltage at the active mode and not connecting the first NMOSFET to the grounding side power source voltage at the standby mode; a third PMOSFET connected to the power source voltage and connected to the first PMOSFET in parallel and holding its output signal; and a third NMOSFET connected to the grounding side power source voltage and connected to the first NMOSFET in parallel and holding its output signal. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012039520(A) 申请公布日期 2012.02.23
申请号 JP20100179676 申请日期 2010.08.10
申请人 POWERCHIP TECHNOLOGY CORP;POWER MEMORY CO LTD 发明人
分类号 H03K19/0948;H03K3/037;H03K3/356;H03K19/00;H03K19/096 主分类号 H03K19/0948
代理机构 代理人
主权项
地址