发明名称 |
EPITAXIAL GROWTH OF SILICON DOPED WITH CARBON AND PHOSPHORUS USING HYDROGEN CARRIER GAS |
摘要 |
A method for depositing epitaxial films of silicon carbon (Si:C). In one embodiment, the method includes depositing an n-type doped silicon carbon (Si:C) semiconductor material on a semiconductor deposition surface using a deposition gas precursor composed of a silane containing gas precursor, a carbon containing gas precursor, and an n-type gas dopant source. The deposition gas precursor is introduced to the semiconductor deposition surface with a hydrogen (H2) carrier gas. The method for depositing epitaxial films may include an etch reaction provided by hydrogen chloride (HCl) gas etchant and a hydrogen (H2) carrier gas. |
申请公布号 |
US2012043556(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US20100860236 |
申请日期 |
2010.08.20 |
申请人 |
DUBE ABHISHEK;CHAKRAVARTI ASHIMA B.;LI JINGHONG H.;LOESING RAINER;SCHEPIS DOMINIC J.;INTERNATIONAL BUSINESS MACHINES CORPORATION |
发明人 |
DUBE ABHISHEK;CHAKRAVARTI ASHIMA B.;LI JINGHONG H.;LOESING RAINER;SCHEPIS DOMINIC J. |
分类号 |
H01L29/12;H01L21/203 |
主分类号 |
H01L29/12 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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