发明名称 TECHNIQUES FOR PROCESSING A SUBSTRATE
摘要 <p>Herein, an improved technique for processing a substrate is disclosed. In one particular exemplary embodiment, the technique may be realized as a method for processing a substrate. The method may comprise directing an ion beam comprising a plurality of ions along an ion beam path, from an ion source to the substrate; disposing at least a portion of a mask in the ion beam path, between the ion source and the substrate; and translating one of the substrate and the mask relative to other one of the substrate and the mask.</p>
申请公布号 KR20120016224(A) 申请公布日期 2012.02.23
申请号 KR20117026146 申请日期 2010.04.08
申请人 VARIAN SEMICONDUCTOR EQUIPMENT ASSOCIATES, INC. 发明人 DANIELS KEVIN M.;LOW RUSSELL J.;RIORDON BENJAMIN B.
分类号 H01L21/265 主分类号 H01L21/265
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