| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a spin injection device and a spin injection magnetic apparatus, and a magnetic memory apparatus in which spin injection magnetization reversal occurs with small electric current density. <P>SOLUTION: A spin injection device comprises: a spin injection unit 1 that has a spin polarization unit 9 consisting of single ferromagnetic fixation layer 26 and an injection junction unit 7 consisting of a first non-magnetic layer formed on the spin polarization unit 9; a ferromagnetic free layer 27 provided in contact with the spin injection unit 1; and a second non-magnetic layer 28 formed on the surface of the ferromagnetic free layer 28. The first non-magnetic layer is made of an insulator or a conductor, and the second non-magnetic layer 28 is made of any one of Ru, Ir and Rh. The magnetization of the ferromagnetic free layer 27 is reversed without applying external magnetic field and with applying electric current in the direction perpendicular to the film surfaces of both the spin polarization unit 9 and the second non-magnetic layer 28 formed on the surface of the ferromagnetic free layer 27. <P>COPYRIGHT: (C)2012,JPO&INPIT |
