发明名称 |
OXIDIZING PARTICLES BASED SLURRY FOR NOBEL METAL INCLUDING RUTHENIUM CHEMICAL MECHANICAL PLANARIZATION |
摘要 |
A method for chemical mechanical planarization of ruthenium is provided. A semiconductor substrate comprising ruthenium is contacted with a chemical mechanical polishing system comprising an oxidizing particle, an abrasive, a polishing pad and a liquid carrier. The pH of the polishing composition is about 8 to 12. A high ruthenium removal rate for the inventive slurry was observed. The disclosed oxidizing particle advantageously improves the polishing speed of ruthenium under low polishing pressure and decreases the scratches generated on low-k material.
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申请公布号 |
US2012045970(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US201013266520 |
申请日期 |
2010.05.06 |
申请人 |
LI YUZHUO;RAMJI KARPAGAVALLI;BASF SE |
发明人 |
LI YUZHUO;RAMJI KARPAGAVALLI |
分类号 |
B24B1/00 |
主分类号 |
B24B1/00 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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