发明名称 |
Methods of Forming CMOS Transistors Using Tensile Stress Layers and Hydrogen Plasma Treatment |
摘要 |
Methods of forming integrated circuit devices include forming a PMOS transistor having a SiGe channel region therein and then exposing at least a portion of the PMOS transistor to a hydrogen plasma. A tensile stress layer may be formed on the PMOS transistor. The exposing step may include exposing source and drain regions of the PMOS transistor to the hydrogen plasma.
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申请公布号 |
US2012045873(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US20100859644 |
申请日期 |
2010.08.19 |
申请人 |
JEONG YONG-KUK;KANG LAEGU;SUNG KIM NAM;YANG DAE-WON |
发明人 |
JEONG YONG-KUK;KANG LAEGU;SUNG KIM NAM;YANG DAE-WON |
分类号 |
H01L21/8238;H01L21/336 |
主分类号 |
H01L21/8238 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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