| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a semiconductor light-emitting device with excellent electrical characteristics and improved light extraction efficiency, and to provide a method of manufacturing the same. <P>SOLUTION: A semiconductor light-emitting device comprises: a first semiconductor layer 10 of a first conductive type; a second semiconductor layer 20 of a second conductive type; a light-emitting portion 30 provided between the first semiconductor layer and the second semiconductor layer; a first transparent conductive layer 51; and a second transparent conductive layer 52. The first transparent conductive layer 51 is provided at the opposite side of the light-emitting portion 30 with respect to the second semiconductor layer, has transparency to emission light emitted from the light-emitting portion, and contains oxygen. The second transparent conductive layer 52 is provided between the second semiconductor layer and the first transparent conductive layer, has transparency to the emission light, has a higher refractive index for the emission light than the first transparent conductive layer, and contains oxygen in a higher concentration than the first transparent conductive layer. <P>COPYRIGHT: (C)2012,JPO&INPIT |
