| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a manufacturing method of a crystal device which has an only slightly different thermal expansion coefficient from that of crystal wafers whose lids and bases are AT-cut. <P>SOLUTION: A manufacturing method of a crystal device comprises: a process for preparing an AT-cut crystal wafer 70 which includes multiple frames having AT-cut vibration pieces and outer frames to surround the AT-cut vibration pieces and to support the AT-cut vibration pieces; a process for preparing a crystal lid wafer 60 which includes multiple lids; a process for preparing a crystal base wafer 80 which includes multiple bases; and a bonding process for bonding the At-cut crystal wafer, the crystal base wafer and the crystal lid wafer. The AT-cut crystal wafer, the crystal base wafer and the crystal lid wafer are 3 to 4 inches in size, and the crystal base wafer and the crystal lid wafer are cut out in the range of no less than 24 degrees 00 minute and no more than 32 degrees 28 minutes from a Z-axis which is a crystallographic axis of a crystal. <P>COPYRIGHT: (C)2012,JPO&INPIT |
