| 摘要 |
<P>PROBLEM TO BE SOLVED: To solve the problem that since it is necessary to select all word lines one by one in order to disturb a desired substitution source word line, a test time becomes longer than necessary. <P>SOLUTION: The semiconductor memory includes: a plurality of fuse sets for storing substitution source low address information showing the low address of a substitution source word line; a selection circuit for selecting one of the plurality of fuse sets when a substitution source word line selection test mode signal is High, and for successively shifting a selection destination fuse set; a selector for outputting the substitution source low address information stored in the selection destination fuse set when the substation source word line selection test mode signal is High, and for outputting a low address signal to be input from the outside when the substation source word line selection test mode signal is Low; and a pre-decoder for performing a pre-decode operation of pre-decoding and outputting a low address shown by the substation source low address information or the low address signal output from the selector. <P>COPYRIGHT: (C)2012,JPO&INPIT |
