发明名称 |
Semiconductor device having memory unit, method of writing to or reading from memory unit, and semiconductor device manufacturing method |
摘要 |
A first semiconductor device is formed over a substrate and includes a first insulation film, a first electrode, and a first diffusion layer. A second semiconductor device is formed over a substrate and includes a second insulation film, a second electrode, and a second diffusion layer. The second electrode is coupled to the first electrode. A control transistor allows one of a source and a drain to be coupled to the first electrode and the second electrode, allows the other one of the source and the drain to be coupled to a bit line, and allows a gate electrode to be coupled to a word line. A first potential control line is coupled to the first diffusion layer and controls a potential of the first diffusion layer. A second potential control line is coupled to the second diffusion layer and controls a potential of the second diffusion layer.
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申请公布号 |
US2012044741(A1) |
申请公布日期 |
2012.02.23 |
申请号 |
US201113067773 |
申请日期 |
2011.06.24 |
申请人 |
TAKAOKA HIROMICHI;HIDAKA KENICHI;TSUDA HIROSHI;ISHIGE KIYOKAZU;KUBOTA YOSHITAKA;ONUMA TAKUJI;RENESAS ELECTRONICS CORPORATION |
发明人 |
TAKAOKA HIROMICHI;HIDAKA KENICHI;TSUDA HIROSHI;ISHIGE KIYOKAZU;KUBOTA YOSHITAKA;ONUMA TAKUJI |
分类号 |
G11C17/08;H01L21/336;H01L27/088 |
主分类号 |
G11C17/08 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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