| 摘要 |
<P>PROBLEM TO BE SOLVED: To provide a temperature elevation apparatus which is reduced in size and low-priced, facilitates temperature control and in addition, can be applied to a temperature elevation test at a high temperature exceeding a temperature limit of a semiconductor device comprised of silicon; and a temperature elevation test method employing the temperature elevation apparatus. <P>SOLUTION: A power supply voltage is applied from an external DC power source 2 to a drain electrode of an MOSFET 10 comprised of silicon carbide (SiC), and a variable bias voltage generated from the applied power supply voltage is applied to a gate electrode 13, thereby elevating a temperature of the MOSFET 10. A change in a voltage obtained by dividing the power supply voltage through resistors R1, R2 is amplified with a predetermined negative amplification factor by an MOSFET 20 and added to a voltage, obtained by dividing the power supply voltage through resistors R3, R4, by a drain electrode 21, so that a voltage of the drain electrode 21 is fixed and the bias voltage is kept constant. <P>COPYRIGHT: (C)2012,JPO&INPIT |
