发明名称 |
NANOIMPRINT MOLD MANUFACTURING METHOD AND RESIST PATTERN FORMATION METHOD |
摘要 |
<P>PROBLEM TO BE SOLVED: To provide a nanoimprint mold manufacturing method and a resist pattern formation method capable of preventing a resist pattern shape from deteriorating even in an atmosphere in which oxygen exists and forming a fine transfer pattern in means for improving dry etching resistance of a resist pattern via electron beam irradiation. <P>SOLUTION: A resist pattern formation method forms a resist pattern 2, forms a protection film 3 for protecting the resist from ozone ashing on the resist pattern, irradiates the resist pattern with electron beam 4 via the protection film in an atmosphere in which oxygen exists like in the air, and then forms the resist pattern where dry etching resistance is improved by removing the protection film. <P>COPYRIGHT: (C)2012,JPO&INPIT |
申请公布号 |
JP2012038809(A) |
申请公布日期 |
2012.02.23 |
申请号 |
JP20100175486 |
申请日期 |
2010.08.04 |
申请人 |
DAINIPPON PRINTING CO LTD |
发明人 |
KONO YUSUKE;ITO KIMIO;CHIBA TAKESHI;HIRAKA TAKAAKI |
分类号 |
H01L21/027;B29C33/38;B29C59/02;B81C99/00 |
主分类号 |
H01L21/027 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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