III-V COMPOUND SEMICONDUCTOR MATERIAL WITH NO ANTI-PHASE BOUNDARY ON SEMICONDUCTOR SUBSTRATE AND MANUFACTURING METHOD OF THE SAME

摘要

PROBLEM TO BE SOLVED: To provide a III-V compound semiconductor material with no anti-phase boundary (APB) and the manufacturing method of the same.

SOLUTION: A manufacturing method of a III-V compound semiconductor material comprises: a) a process for preparing a substrate made of a first semiconductor material having a (001) orientation, an insulation layer positioned on the substrate to contact the substrate, and a concavity region to expose at least a part of the substrate in the insulation layer; b) a process for forming a buffer layer positioned on the exposed substrate in the concavity region to contact the exposed substrate; c) a process for applying heat treatment to roughen the surface of the buffer layer. The buffer layer has a round shape having a double-step surface after the application of heat treatment. The manufacturing method further comprises d) a process for at least partly filling the concavity region by the III-V compound semiconductor material positioned on the double-step surface of the buffer layer to contact the buffer layer.

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