发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To provide a semiconductor device that can, in the case where a semiconductor chip generates heat due to an excessive current at abnormal time, easily cut off the excessive current. <P>SOLUTION: A semiconductor device comprises: a semiconductor chip 10 including a power transistor; a collector terminal 22; an interlayer connection part 30 and a conductor pattern 40 for electrically connecting the collector terminal 22 and a collector electrode 12 of the semiconductor chip 10; and resin films 51 to 53 which cover the interlayer connection part 30 and the conductor pattern 40 in opposite regions between the collector terminal 22 and a formation plane of the semiconductor chip 10 that is provided with the collector electrode 12, the resin films 51 to 53 being provided for and in contact with this formation plane and the collector terminal 22, and being formed using a material with a larger thermal expansion coefficient than the interlayer connection part 30 and the conductor pattern 40. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012038870(A) 申请公布日期 2012.02.23
申请号 JP20100176743 申请日期 2010.08.05
申请人 DENSO CORP 发明人 MOCHIDA AKIYOSHI
分类号 H01L23/48;H01L23/29;H01L23/31 主分类号 H01L23/48
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