发明名称 SEMICONDUCTOR DEVICE
摘要 <P>PROBLEM TO BE SOLVED: To change the trigger voltage of a thyristor independently from the hold voltage when the thyristor is used as a protection element. <P>SOLUTION: A first first-conductive-type diffusion layer 120, a first second-conductive-type diffusion layer 130, a second first-conductive-type diffusion layer 150, and a second second-conductive-type diffusion layer 140 are arranged in this order. In the region in which the second second-conductive-type diffusion layer 140 and a first conductive-type layer 100 are contacted each other, these impurity concentrations of a portion located at the side surfaces of the second second-conductive-type diffusion layer 140 are higher than those of a portion located at the bottom surface of the second second-conductive-type diffusion layer 140. <P>COPYRIGHT: (C)2012,JPO&INPIT
申请公布号 JP2012038974(A) 申请公布日期 2012.02.23
申请号 JP20100178930 申请日期 2010.08.09
申请人 RENESAS ELECTRONICS CORP 发明人 SAWAHATA KOICHI;SATO MASAHARU
分类号 H01L27/04;H01L21/822;H01L27/06;H01L29/74 主分类号 H01L27/04
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